Display apparatus and method of manufacturing the same

ABSTRACT

A display apparatus and a method of manufacturing the same are disclosed. The display apparatus includes at least one light emitting diode chip, a conductive portion disposed under the light emitting diode chip and coupled to the light emitting diode chip, and an insulating material surrounding the conductive portion. The conductive portion includes a first conductive portion and a second conductive portion, and the insulating material is formed to expose at least a portion of the upper surfaces of the first conductive portion and the second conductive portion.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/935,529, filed Mar. 26, 2018, and claims priority to and the benefitof U.S. Provisional Patent Application No. 62/477,021, filed on Mar. 27,2017, each of which is hereby incorporated by reference for all purposesas if fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the invention relate generally to a displayapparatus and a method of manufacturing the same. More specifically,exemplary embodiments relate to a display apparatus employing lightemitting diode chips and a method of manufacturing the same.

Discussion of the Background

A light emitting diode refers to an inorganic semiconductor device thatemits light through recombination of electrons and holes. In recentyears, light emitting diodes have been used in various fields includingdisplays, automobile lamps, general lighting, and the like. Lightemitting diodes have various advantages such as long lifespan, low powerconsumption, and rapid response. With such advantages, a light emittingdiode replaces existing light sources in the related art.

Recently, display apparatuses, such as TVs, monitors and electronicdisplay boards, realize colors through a thin film transistor liquidcrystal display (TFT-LCD) panel, and employ light emitting diodes as alight source of a backlight unit. In addition, various studies have beenconducted to develop a display apparatus capable of realizing colorsdirectly through light emitting diodes instead of using a separate LCDwith light emitting diodes as a backlight source.

In order to use light emitting diodes as a light source of a backlightunit or for direct realization of colors, one light emitting diode maybe provided to each pixel. Here, in order to control each of the lightemitting diodes, an active matrix (AM) drive type or a passive matrix(PM) drive type may be employed. For the AM drive type, the luminousarea of each light emitting diode is 1/10,000 of the area of one pixel,and for the PM drive type, the luminous area of each light emittingdiode is 1/100 of the area of one pixel.

However, light emitting diodes having an excessively large luminous areaprovide a problem of low current density, causing deterioration inluminous efficacy. Accordingly, light emitting diodes having a smallluminous area as compared with the area of a pixel are used to increasecurrent density while satisfying luminous efficacy in a pixel.

However, since the size of the light emitting diode decreasescorresponding to decrease in luminous area, light emitting diodes havinga small luminous area provide difficulty in mounting and replacement ofa number of light emitting diodes due to a their small size.

The above information disclosed in this Background section is only forunderstanding of the background of the inventive concepts, and,therefore, it may contain information that does not constitute priorart.

SUMMARY

Devices constructed according to exemplary embodiments of the inventioninclude a light emitting diode chip capable of having a high currentdensity, despite a small amount of current being supplied to the lightemitting diode chip through reduction in luminous area. In addition,devices constructed according to exemplary embodiments of the inventionare capable of improving the manufacturing yield and replacement of theparts of the display apparatus because the devices have large lightemitting diode packages compared to the light emitting diode chips.Furthermore, methods according to exemplary embodiments of the inventionare capable of minimizing failure in the transfer of the light emittingdiode chips by transferring of only some light emitting diode chips fromone surface to the substrate electrodes on a substrate via electrodeenlarging portions.

Additional features of the inventive concepts will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

In accordance with one exemplary embodiment of the present invention, adisplay apparatus includes: a light emitting diode chip; and a firstsubstrate electrode and a second substrate electrode disposed under thelight emitting diode chip and electrically connected to the lightemitting diode chip, the first substrate electrode and the secondsubstrate electrode are electrically insulated from each other, whereinat least a portion of at least one of the first substrate electrode andthe second substrate electrode protrudes above its surroundings.

The at least the portion of the at least one of the first substrateelectrode and the second substrate electrode protruding above thesurroundings may be provided with a filler including an insulatingmaterial therein.

The display apparatus may further include a substrate supporting thelight emitting diode chip, wherein the first substrate electrode and thesecond substrate electrode are disposed on the substrate.

The light emitting diode chip may include: a light emitting structureincluding a first conductivity type semiconductor layer, a secondconductivity type semiconductor layer, and an active layer interposedbetween the first conductivity type semiconductor layer and the secondconductivity type semiconductor layer; and a first electrodeelectrically connected to the first conductivity type semiconductorlayer.

The light emitting diode chip may further include a second electrodeelectrically connected to the second conductivity type semiconductorlayer, wherein the first electrode is electrically connected to thefirst conductivity type semiconductor layer exposed by the removal ofthe active layer and the second conductivity type semiconductor layer.

The light emitting diode chip may further include: an encapsulationmaterial disposed to cover the light emitting structure and the firstelectrode and the second electrode while insulating the first electrodeand the second electrode from each other; a first bump electricallyconnected to the first electrode; and a second bump electricallyconnected to the second electrode, wherein the first bump and the secondbump are electrically connected to the first electrode and the secondelectrode, respectively, through the encapsulation material.

The display apparatus may further include a connection electrodeelectrically connecting the second conductivity type semiconductor layerto the second substrate electrode, wherein the first electrode isdisposed under the light emitting structure and is electricallyconnected to the first substrate electrode.

The display apparatus may further include an insulating portion fillinga space between the first substrate electrode and the second substrateelectrode and surrounding a side surface of the light emittingstructure, wherein the connection electrode is disposed along an uppersurface and a side surface of the insulating portion.

In accordance with another exemplary embodiment of the presentinvention, a display apparatus includes: a light emitting diode chip;and a first substrate electrode and a second substrate electrodedisposed under the light emitting diode chip and electrically connectedto the light emitting diode chip, the first substrate electrode and thesecond substrate electrode being electrically insulated from each other;and a first electrode-enlarging portion and a second electrode-enlargingportion disposed on the first substrate electrode and the secondsubstrate electrode, respectively, and electrically connecting the lightemitting diode chip to the first substrate electrode and the secondsubstrate electrode.

The display apparatus may further include a substrate supporting thelight emitting diode chip, wherein the first substrate electrode and thesecond substrate electrode are disposed on the substrate.

In accordance with another exemplary embodiment of the presentinvention, a method of manufacturing a display apparatus includes:disposing a first manufacturing substrate and a substrate to face eachother, the first manufacturing substrate having a plurality of lightemitting diode chips arranged thereon, the substrate having firstsubstrate electrodes and second substrate electrodes disposed on thesubstrate; moving the first manufacturing substrate toward the substratesuch that the some of the plurality of light emitting diode chips arebrought into contact with the first substrate electrodes and secondsubstrate electrodes; and separating the first manufacturing substratefrom the plurality of light emitting diode chips brought into contactwith and coupled to the first substrate electrodes and the secondsubstrate electrodes, wherein at least one of the first substrateelectrodes and the second substrate electrodes at least partiallyprotrudes above the substrate so as to prevent the remaining lightemitting diode chips not brought into contact with the first substrateelectrodes and the second substrate electrodes from contacting thesubstrate and the first substrate electrodes and the second substrateelectrodes.

The portion of the at least one of the first substrate electrode and thesecond substrate electrode protruding above the surroundings may beprovided with a filler including an insulating material therein.

Each light emitting diode chip may include: a light emitting structureincluding a first conductivity type semiconductor layer, a secondconductivity type semiconductor layer, and an active layer interposedbetween the first and second conductivity type semiconductor layers; afirst electrode electrically connected to the first conductivity typesemiconductor layer exposed by removing the active layer and the secondconductivity type semiconductor layer; a second electrode electricallyconnected to the second conductivity type semiconductor layer; anencapsulation material disposed to cover the light emitting structureand the first electrode and the second electrode while insulating thefirst electrode and the second electrode from each other; a first bumpelectrically connected to the first electrode; and a second bumpelectrically connected to the second electrode, wherein the first bumpand the second bump are electrically connected to the first electrodeand the second electrode, respectively, through the encapsulationmaterial.

Each light emitting diode chip may include: a light emitting structureincluding a first conductivity type semiconductor layer, a secondconductivity type semiconductor layer, and an active layer interposedbetween the first and second conductivity type semiconductor layers; anda second electrode electrically connected to the second conductivitytype semiconductor layer, wherein the second electrode is electricallycoupled to the second substrate electrode.

The method may further include: forming an insulating portion to fill aspace between a first substrate electrode of the first substrateelectrode and a second substrate electrode of the second substrateelectrode while surrounding a side surface of the light emittingstructure; and forming a connection electrode electrically connected tothe first conductivity type semiconductor layer exposed on an uppersurface of the insulating portion and electrically connected to thefirst substrate electrode.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theinventive concepts.

FIG. 1 is a sectional view of part of a display apparatus according to afirst exemplary embodiment of the present invention.

FIG. 2A, FIG. 2B, and FIG. 2C show sectional views illustrating a methodof manufacturing the display apparatus according to the first exemplaryembodiment of the present invention.

FIG. 3 is a sectional view of part of a display apparatus according to asecond exemplary embodiment of the present invention.

FIG. 4 is a sectional view of part of a display apparatus according to athird exemplary embodiment of the present invention.

FIG. 5 is a sectional view of part of a display apparatus according to afourth exemplary embodiment of the present invention.

FIG. 6A, FIG. 6B, FIG. 6C, FIG. 6D, and FIG. 6E show sectional viewsillustrating a method of manufacturing the display apparatus accordingto the fourth exemplary embodiment of the present invention.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments or implementations of theinvention. As used herein “embodiments” and “implementations” areinterchangeable words that are non-limiting examples of devices ormethods employing one or more of the inventive concepts disclosedherein. It is apparent, however, that various exemplary embodiments maybe practiced without these specific details or with one or moreequivalent arrangements. In other instances, well-known structures anddevices are shown in block diagram form in order to avoid unnecessarilyobscuring various exemplary embodiments. Further, various exemplaryembodiments may be different, but do not have to be exclusive. Forexample, specific shapes, configurations, and characteristics of anexemplary embodiment may be used or implemented in another exemplaryembodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the inventive concepts may be implemented in practice.Therefore, unless otherwise specified, the features, components,modules, layers, films, panels, regions, and/or aspects, etc.(hereinafter individually or collectively referred to as “elements”), ofthe various embodiments may be otherwise combined, separated,interchanged, and/or rearranged without departing from the inventiveconcepts.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless specified. Further,in the accompanying drawings, the size and relative sizes of elementsmay be exaggerated for clarity and/or descriptive purposes. When anexemplary embodiment may be implemented differently, a specific processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. For the purposes of thisdisclosure, “at least one of X, Y, and Z” and “at least one selectedfrom the group consisting of X, Y, and Z” may be construed as X only, Yonly, Z only, or any combination of two or more of X, Y, and Z, such as,for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term “and/or”includes any and all combinations of one or more of the associatedlisted items.

Although the terms “first,” “second,” etc. may be used herein todescribe various types of elements, these elements should not be limitedby these terms. These terms are used to distinguish one element fromanother element. Thus, a first element discussed below could be termed asecond element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one elements relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a sectional view of part of a display apparatus according to afirst exemplary embodiment of the present invention.

Referring to FIG. 1, the display apparatus 100 according to the firstexemplary embodiment includes a substrate 110, light emitting diodechips 120, first substrate electrodes 132, second substrate electrodes134, first electrode-enlarging portions 132 a, and secondelectrode-enlarging portions 134 a.

The substrate 110 serves to support the light emitting diode chips 120.In this exemplary embodiment, the substrate 110 may be formed of aninsulating material and have a predetermined thickness.

The light emitting diode chips 120 are arranged on the substrate 110 andmay emit light upon receiving power from an external power source. Asshown in FIG. 1, each of the light emitting diode chips 120 includes alight emitting structure 29, an n-type electrode 31, a p-type electrode33, an n-type bump 35, a p-type bump 37, and an encapsulation portion39. The light emitting structure 29 may include an n-type semiconductorlayer 23, an active layer 25, and a p-type semiconductor layer 27.

Each of the n-type semiconductor layer 23, the active layer 25 and thep-type semiconductor layer 27 may include Group III-V based compoundsemiconductors. By way of example, the n-type semiconductor layer 23,the active layer 25 and the p-type semiconductor layer 27 may includenitride semiconductors such as (Al, Ga, In)N. The position of the n-typesemiconductor layer 23 may be interchanged with the position of thep-type semiconductor layer 27.

The n-type semiconductor layer 23 may be a conductive semiconductorlayer containing n-type dopants (for example, Si) and the p-typesemiconductor layer 27 may be a conductive semiconductor layercontaining p-type dopants (for example, Mg). The active layer 25 isinterposed between the n-type semiconductor layer 23 and the p-typesemiconductor layer 27, and may include a multi-quantum well (MQW)structure. The composition of the active layer 25 may be determined toemit light having a desired peak wavelength. In this exemplaryembodiment, the composition of the active layer 25 may be determinedsuch that the light emitting diode chip 120 can emit light having a peakwavelength in a desired wavelength band. By way of example, the lightemitting structure 29 may include an AlInGaN-based semiconductor.

Referring to FIG. 1, in the light emitting structure 29, the n-typesemiconductor layer 23 and the active layer 25 are sequentially stackedon the p-type semiconductor layer 27 in the stated order. In addition,the n-type semiconductor layer 23 may be partially exposed by partiallyremoving the p-type semiconductor layer 27 and the active layer 25.

The n-type electrode 31 is disposed in an exposed region of a lowersurface of the n-type semiconductor layer 23 to be electricallyconnected to the n-type semiconductor layer 23, and the p-type electrode33 is disposed on a lower surface of the p-type semiconductor layer 27to be electrically connected to the p-type semiconductor layer 27. Thatis, in this exemplary embodiment, the light emitting diode chip 120 mayhave a horizontal structure in which the n-type electrode 31 and thep-type electrode 33 are arranged in the same direction.

The encapsulation portion 39 may be disposed on a lower surface of thelight emitting structure 29 to cover the n-type electrode 31, the p-typeelectrode 33 and the light emitting structure 29. The encapsulationportion 39 exhibits electrically insulating properties and can protectthe light emitting structure 29, the n-type electrode 31 and the p-typeelectrode 33 from external environments. In this exemplary embodiment,the encapsulation portion 39 may be formed of a transparent material.Alternatively, the encapsulation portion 39 may be formed of an opaquematerial or a translucent material, as needed. Here, the encapsulationportion 39 may have the same width as the light emitting structure 29.

The n-type bump 35 and the p-type bump 37 may be disposed to cover aportion of a lower surface of the encapsulation portion 39 and may beelectrically connected to the n-type electrode 31 and the p-typeelectrode 33 through via-holes formed in the encapsulation portion 39,respectively. The n-type bump 35 and the p-type bump 37 are spaced apartfrom each other on the lower surface of the encapsulation portion 39 tobe electrically insulated from each other.

The first substrate electrodes 132 and the second substrate electrodes134 are provided to the substrate 110. Each of the first substrateelectrodes 132 extends from an upper surface of the substrate 110 to alower surface thereof through the substrate 110 to be exposed on theupper and lower surfaces of the substrate 110. Like the first substrateelectrodes 132, each of the second substrate electrodes 134 extends fromthe upper surface of the substrate 110 to the lower surface thereofthrough the substrate 110 to be exposed on the upper and lower surfacesof the substrate 110. That is, according to this exemplary embodiment,the first substrate electrodes 132 and the second substrate electrodes134 are regularly arranged on the substrate 110 formed of an insulatingmaterial. For example, the first substrate electrodes 132 and the secondsubstrate electrodes 134 are regularly arranged within the substrate110.

The first electrode-enlarging portion 132 a and the secondelectrode-enlarging portion 134 a may be disposed on the first substrateelectrode 132 and the second substrate electrode 134, respectively. Thefirst electrode-enlarging portion 132 a may be disposed on the firstsubstrate electrode 132 to be electrically connected to the firstsubstrate electrode 132 and may have a predetermined thickness t1. Inaddition, the second electrode-enlarging portion 134 a may be disposedon the second substrate electrode 134 to be electrically connected tothe second substrate electrode 134 and may have a predeterminedthickness t1. With this structure, upper surfaces of the firstelectrode-enlarging portion 132 a and the second electrode-enlargingportion 134 a are placed above upper surfaces of the first substrateelectrode 132 and the second substrate electrode 134.

The first electrode-enlarging portion 132 a and the secondelectrode-enlarging portion 134 a have smaller widths than the firstsubstrate electrode 132 and the second substrate electrode 134,respectively. Further, as illustrated in FIG. 1, the opposed outer edgesof the first substrate electrode 132 and the second substrate electrode134 extend beyond the width of the light emitting diode chip 120.

Each of the light emitting diode chips 120 may be disposed on the firstelectrode-enlarging portion 132 a and the second electrode-enlargingportion 134 a. That is, the n-type bump 35 and the p-type bump 37 of thelight emitting diode chip 120 may be electrically connected to the firstelectrode-enlarging portion 132 a and the second electrode-enlargingportion 134 a, respectively. To this end, a bonding portion S may bedeposited on each of the first electrode-enlarging portion 132 a and thesecond electrode-enlarging portion 134 a.

In addition, as shown in the drawings, the first electrode-enlargingportion 132 a and the second electrode-enlarging portion 134 a may havethe same thickness t1 and serve to separate the light emitting diodechip 120 from the upper surface of the substrate 110 by a predetermineddistance or more. Here, the thickness t1 of each of the firstelectrode-enlarging portion 132 a and the second electrode-enlargingportion 134 a may be smaller than the thickness of the light emittingdiode chip 120 and greater than the thickness of the bonding portion S.By way of example, the first electrode-enlarging portion 132 a and thesecond electrode-enlarging portion 134 a may have a thickness t1 of 0.2μm to 5 μm.

Further, the first electrode-enlarging portion 132 a and the secondelectrode-enlarging portion 134 a may be formed of the same material asthe first substrate electrode 132 and the second substrate electrode 134and may include an electrically conductive material. That is, the firstelectrode-enlarging portion 132 a and the second electrode-enlargingportion 134 a may include a metal.

FIG. 2A, FIG. 2B, and FIG. 2C shows sectional views illustrating amethod of manufacturing the display apparatus according to the firstexemplary embodiment of the present invention.

Referring to FIGS. 2A, 2B, and 2C, the method of manufacturing thedisplay apparatus 100 according to the first exemplary embodiment willbe described.

Referring to FIG. 2A, a plurality of light emitting diode chips 120 arecoupled to a first manufacturing substrate 51. The first substrateelectrodes 132 and the second substrate electrodes 134 are arranged onthe substrate 110. For example, the first substrate electrodes 132 andthe second substrate electrodes 134 are arranged within the substrate110 In addition, a first electrode-enlarging portion 132 a and a secondelectrode-enlarging portion 134 a may be disposed on the first substrateelectrode 132 and the second substrate electrode 134, respectively.

That is, as shown in FIG. 2A, two pairs of first substrate electrodes132 and second substrate electrodes 134 are arranged on the substrate110 and three light emitting diode chips 120 are coupled to the firstmanufacturing substrate 51. In this state, the first manufacturingsubstrate 51 is moved to the substrate 110 such that n-type bumps 35 andp-type bumps 37 of the light emitting diode chips 120 are brought intocontact with the first electrode-enlarging portions 132 a and the secondelectrode-enlarging portions 134 a. Then, the light emitting diode chips120 may be compressed downwards to be bonded to the firstelectrode-enlarging portions 132 a and the second electrode-enlargingportions 134 a.

Here, among the plurality of light emitting diode chips 120 coupled tothe first manufacturing substrate 51, a light emitting diode chip 120not contacting the first electrode-enlarging portion 132 a and thesecond electrode-enlarging portion 134 a does not contact any region ofthe substrate 110 due to the thicknesses of the firstelectrode-enlarging portion 132 a and the second electrode-enlargingportion 134 a. That is, the light emitting diode chip 120 not contactingthe first electrode-enlarging portion 132 a and the secondelectrode-enlarging portion 134 a does not contact any region of thesubstrate 110 and is disposed in the air.

Next, as shown in FIG. 2C, when the first manufacturing substrate 51 ismoved upward, the light emitting diode chips 120 bonded to the firstelectrode-enlarging portions 132 a and the second electrode-enlargingportions 134 a remain on the substrate 110, and the light emitting diodechip 120 disposed in the air is moved together with the firstmanufacturing substrate 51.

In this way, some of the plurality of light emitting diode chips 120coupled to the first manufacturing substrate 51 can be transferred tothe substrate 110. Here, since the first electrode-enlarging portions132 a and the second electrode-enlarging portions 134 a are disposed onthe first substrate electrodes 132 and the second substrate electrodes134, some of the plural light emitting diode chips 120 coupled to thefirst manufacturing substrate 51 can be transferred to the substrate 110due to the thickness t1 of the first and second electrode-enlargingportions 132 a, 134 a.

FIG. 3 is a sectional view of part of a display apparatus according to asecond exemplary embodiment of the present invention.

Referring to FIG. 3, the display apparatus 200 according to the secondexemplary embodiment includes a substrate 110, light emitting diodechips 120, first substrate electrodes 132, second substrate electrodes134, first electrode-enlarging portions 132 a, and secondelectrode-enlarging portions 134 a. In description of the displayapparatus 200 according to this exemplary embodiment, description of thesame components as those of the first exemplary embodiment will beomitted.

In this exemplary embodiment, the first substrate electrodes 132 and thesecond substrate electrodes 134 are arranged on (such as within) thesubstrate 110 such that a distance between the first substrate electrode132 and the second substrate electrode 134 is larger than the distancebetween the first substrate electrode 132 and the second substrateelectrode 134 according to the first exemplary embodiment. In addition,the first electrode-enlarging portions 132 a and the secondelectrode-enlarging portions 134 a are disposed on an upper surface ofthe substrate 110. Here, the first electrode-enlarging portion 132 a isdisposed to electrically contact at least a portion of the firstsubstrate electrode 132 and the second electrode-enlarging portions 134a is disposed to electrically contact at least a portion of the secondsubstrate electrode 134.

That is, the first electrode-enlarging portion 132 a and the secondelectrode-enlarging portion 134 a may be disposed on the first substrateelectrode 132 and the second substrate electrode 134 to be placed insome regions thereof and electrically connected thereto, respectively.Here, the first electrode-enlarging portion 132 a and the secondelectrode-enlarging portion 134 a may be arranged corresponding to thedistance between the n-type bump 35 and the p-type bump 37 of each ofthe light emitting diode chips 120.

FIG. 4 is a sectional view of part of a display apparatus according to athird exemplary embodiment of the present invention.

Referring to FIG. 4, the display apparatus 300 according to the thirdexemplary embodiment includes a substrate 110, light emitting diodechips 120, first substrate electrodes 132, second substrate electrodes134, and fillers F. In description of the display apparatus 300according to this exemplary embodiment, description of the samecomponents as those of the first exemplary embodiment will be omitted.

The first substrate electrodes 132 and the second substrate electrodes134 are arranged on the substrate 110. For example, the first substrateelectrodes 132 and the second substrate electrodes 134 are arrangedwithin the substrate 110. In this exemplary embodiment, a portion of thefirst substrate electrode 132 may protrude above the substrate 110 by apredetermined thickness. With this structure, an upper surface of thefirst substrate electrode 132 is placed above the upper surface of thesubstrate 110, as shown in FIG. 3. The filler F may be disposed in theprotrusion of the first substrate electrode 132. The filler F may bedisposed in the protrusion of the first substrate electrode 132 and maybe formed of an insulating material.

In addition, a portion of the second substrate electrode 134 mayprotrude above the substrate 110 by a predetermined thickness. Here, thesecond substrate electrode 134 may have a symmetrical shape with respectto the first substrate electrode 132 or may have the same shape as thefirst substrate electrode 132, as needed.

Although the fillers F are disposed in the first substrate electrode 132and the second substrate electrode 134 in this exemplary embodiment, thefillers F may be omitted, as needed.

FIG. 5 is a sectional view of part of a display apparatus according to afourth exemplary embodiment of the present invention.

Referring to FIG. 5, the display apparatus 400 according to the fourthexemplary embodiment includes light emitting diode chips 120, firstsubstrate electrodes 132, second substrate electrodes 134, insulatingportions 140, and connection electrodes 180.

In this exemplary embodiment, the first substrate electrodes 132 and thesecond substrate electrodes 134 are disposed on a second manufacturingsubstrate 53. However, it should be understood that the presentinvention is not limited thereto. After manufacture of the displayapparatus 400, the second manufacturing substrate 53 may be removed fromthe display apparatus 400, as needed.

The first substrate electrodes 132 and the second substrate electrodes134 are regularly arranged on the second manufacturing substrate 53.Specifically, pairs of first substrate electrodes 132 and secondsubstrate electrodes 134 are regularly arranged on the secondmanufacturing substrate 53, in which the first substrate electrode 132and the second substrate electrode 134 are separated a predetermineddistance from each other.

Here, each of the first substrate electrode 132 and the second substrateelectrode 134 has a predetermined thickness and the thickness of thesecond substrate electrode 134 may be thicker than the first substrateelectrode 132. Further, the second substrate electrode 134 may have asmaller width than the first substrate electrode 132 and the thicknessof the second substrate electrode 134 may correspond to the width of thelight emitting diode chip 120, without being limited thereto.

According to this exemplary embodiment, the second substrate electrode134 may include a filler F therein. As in the third exemplaryembodiment, the filler F may include an insulating material and may bedisposed in the second substrate electrode 134. Accordingly, the fillerF can facilitate formation of the second substrate electrode 134 havinga thick thickness.

The light emitting diode chip 120 is disposed on each of the secondsubstrate electrodes 134. In this exemplary embodiment, the lightemitting diode chip 120 has a vertical structure in which an n-typesemiconductor layer 23, an active layer 25 and a p-type semiconductorlayer 27 are sequentially stacked in the stated order. In this exemplaryembodiment, the p-type semiconductor layer 27 is disposed at a lowerportion of the light emitting diode chip. Further, a p-type electrode 33may be disposed between the p-type semiconductor layer 27 and the secondsubstrate electrode 134.

The p-type electrode 33 is disposed under the p-type semiconductor layer27 and includes first to third electrodes 33 a, 33 b, 33 c. The firstelectrode 33 a electrically contacts the p-type semiconductor layer 27and the second and third electrodes 33 b, 33 c are sequentially disposedunder the first electrode 33 a. In this exemplary embodiment, the firstelectrode 33 a may include gold (Au), the second electrode 33 b mayinclude aluminum Al, and the third electrode 33 c may include silver Ag.

Although the p-type electrode 33 is illustrated as having a multilayerstructure including the first to third electrodes 33 a, 33 b, 33 c inthis exemplary embodiment, the p-type electrode 33 may have a monolayerstructure, as needed, and the p-type electrode 33 may have a thinnerthickness than that shown in FIG. 5.

In this exemplary embodiment, the light emitting structure 29 may bedisposed on the second substrate electrode 134 and the p-type electrode33 of the light emitting structure 29 may be electrically connected tothe second substrate electrode 134. Specifically, the p-type electrode33 may be bonded to the second substrate electrode 134 by a bondingportion S.

In this way, the light emitting diode chip 120 may be disposed on thesecond substrate electrode 134 and the insulating portion 140 may bedisposed to surround the light emitting diode chip 120. The insulatingportion 140 is disposed to fill a space between the first substrateelectrode 132 and the second substrate electrode 134 while partiallycovering an upper surface of the first substrate electrode 132. Further,the insulating portion 140 may be disposed to surround a side surface ofthe light emitting diode chip 120 excluding a portion of the n-typesemiconductor layer 23 of the light emitting diode chip 120.Accordingly, an upper surface of the n-type semiconductor layer 23 ofthe light emitting diode chip 120 may be exposed through an uppersurface of the insulating portion 140, as shown in FIG. 5. Theinsulating portion 140 may have a slanted side surface, as shown in FIG.5, or may have a vertical side surface, as needed. Further, theinsulating portion 140 may have a circular or polygonal shape in planview.

In this exemplary embodiment, the insulating portion 140 may be formedof a transparent material or a translucent material to allow lightemitted from the light emitting diode chip 120 to be dischargedtherethrough. For example, the insulating portion 140 may include atleast one of polydimethylsiloxane (PDMS), polyimide, poly(methylmethacrylate) (PMMA), and a ceramic material.

The display apparatus 400 may further include the connection electrode180, which electrically connects the n-type semiconductor layer 23exposed through the upper surface of the insulating portion 140 to thefirst substrate electrode 132. The connection electrode 180 has one sidecovering an upper surface of the n-type semiconductor layer 23 andextends along the upper surface of the insulating portion 140 to bedisposed at the other side thereof on the first substrate electrode 132in order to electrically connect the n-type semiconductor layer 23 tothe first substrate electrode 132. Although the display apparatusaccording to this exemplary embodiment is illustrated as not includingthe n-type electrode 31, the display apparatus may include the n-typeelectrode 31, as needed. Further, the connection electrode 180 mayinclude a transparent material, for example, ITO or ZnO, to allow lightemitted from the light emitting diode chip 120 to pass therethrough.

FIG. 6A, FIG. 6B, FIG. 6C, FIG. 6D, and FIG. 6E show sectional viewsillustrating a method of manufacturing the display apparatus accordingto the fourth exemplary embodiment of the present invention.

Referring to FIGS. 6A, 6B, 6C, 6D, and 6E, the method of manufacturingthe display apparatus 400 according to the fourth exemplary embodimentwill be described.

Referring to FIG. 6A, a plurality of light emitting diode chips 120 isdisposed on a first manufacturing substrate 51. Here, the plurality oflight emitting diode chips 120 coupled to the first manufacturingsubstrate 51 may have a vertical structure. In addition, first substrateelectrodes 132 and second substrate electrodes 134 are regularlyarranged at constant intervals on the second manufacturing substrate 53.Here, the second substrate electrodes 134 may have a larger thicknessthan the first substrate electrodes 132 and a bonding portion S isdeposited on each of the second substrate electrodes 134.

Next, referring to FIG. 6B, the first manufacturing substrate 51 onwhich the plural light emitting diode chips 120 are disposed is movedtoward the second manufacturing substrate 53 such that some of theplurality of light emitting diode chips 120 are bonded to the firstsubstrate electrodes 132. Here, the light emitting diode chips 120contacting the second substrate electrodes 134 are bonded to the secondsubstrate electrodes 134 by the bonding portion S and the remaininglight emitting diode chips 120 are disposed or remain in the air, asshown in FIG. 6. Then, the first manufacturing substrate 51 iscompressed downwards to couple the light emitting diode chips 120 to thesecond substrate electrodes 134.

Then, as shown in FIG. 6C, the first manufacturing substrate 51 is movedupwards to be separated from the second manufacturing substrate 53.Then, the light emitting diode chips 120 coupled to the second substrateelectrodes 134 are separated from the first manufacturing substrate 51and are disposed on the second substrate electrodes 134.

In this procedure, since the light emitting diode chips 120 notcontacting the second substrate electrodes 134 do not contact othercomponents on the second manufacturing substrate 53 even uponcompression of the first manufacturing substrate 51, the light emittingdiode chips 120 not contacting the second substrate electrodes 134 maynot be separated from the first manufacturing substrate 51.

In this way, some of the plurality of light emitting diode chips 120disposed on the first manufacturing substrate 51 can be transferred tothe second manufacturing substrate 53.

After some of the plurality of light emitting diode chips 120 aretransferred to the second manufacturing substrate 53, an insulatingportion 140 is formed between the light emitting diode chips 120, asshown in FIG. 6D. The insulating portion 140 is formed to fill a spacebetween the first substrate electrode 132 and the second substrateelectrode 134 on the second manufacturing substrate 53 while surroundingeach of light emitting diode chip 120 such that the n-type semiconductorlayer 23 of the light emitting diode chip 120 can be partially exposed.Here, the insulating portion 140 may be formed to have a slanted sidesurface.

Next, as shown in FIG. 6E, connection electrodes 180 are formed to coverthe n-type semiconductor layer 23 exposed on the upper surface of theinsulating portion 140 while extending to the first substrate electrodes132. Each of the connection electrodes 180 may have one side coveringthe n-type semiconductor layer 23 and may be electrically connected atthe other side thereof to the first substrate electrode 132. Further,the connection electrode 180 may extend along the upper and sidesurfaces of the insulating portion 140 while contacting the insulatingportion 140.

According to exemplary embodiments, the light emitting diode chips canhave high current density, despite a small amount of current beingsupplied to the light emitting diode chips through reduction in luminousarea.

In addition, upon transfer of some of plurality of light emitting diodechips from a first substrate to a second substrate, only the lightemitting diode chips to be transferred are brought into contact withsubstrate electrodes of the second substrate with or without theassistance of an electrode-enlarging portion. As a result, it ispossible to minimize failure in transfer of the light emitting diodechips.

Furthermore, even with light emitting diode chips each having a smallluminous area, a light emitting diode package has a large size ascompared with the light emitting diode chips, thereby improving yield inmanufacture and replacement of a display apparatus.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of theappended claims and various obvious modifications and equivalentarrangements as would be apparent to a person of ordinary skill in theart.

What is claimed is:
 1. A method of manufacturing a display apparatus,comprising: preparing a first manufacturing substrate having a pluralityof light emitting diode chips coupled thereto, the plurality of lightemitting diode chips comprising a first light emitting diode chip, asecond light emitting diode chip, and at least one third light emittingdiode chip between the first light emitting diode chip and the secondlight emitting diode chip; preparing a second manufacturing substratehaving a first pair of conductive portions, a second pair of conductiveportions adjacent to the first pair, and an insulating materialsurrounding at least a portion of a side surface of each of theconductive portions; moving the first manufacturing substrate towardsthe second manufacturing substrate such that the first light emittingdiode chip is coupled to the first pair of conductive portions and thesecond light emitting diode chip is coupled to the second pair ofconductive portions; and moving and separating the first manufacturingsubstrate from the first and second light emitting diode chips coupledto the first and second pairs of conductive portions, wherein each ofthe first and second pairs of conductive portions comprises a firstconductive portion and a second conductive portion, the insulatingmaterial is disposed to expose at least a portion of upper surfaces ofthe first conductive portion and the second conductive portion, and theat least one third light emitting diode chip is not coupled to theconductive portions and remains coupled to the first manufacturingsubstrate after the separation of the first manufacturing substrate fromthe first and second light emitting diode chips.
 2. The method ofmanufacturing the display apparatus according to claim 1, wherein eachof the light emitting diode chips comprises: a light emitting structurecomprising a first conductivity type semiconductor layer, a secondconductivity type semiconductor layer, and an active layer interposedbetween the first conductivity type semiconductor layer and the secondconductivity type semiconductor layer; a first electrode electricallyconnected to the first conductivity type semiconductor layer and thefirst conductive portion; and a second electrode formed under the secondconductivity type semiconductor layer and electrically connected to thesecond conductivity type semiconductor layer and the second conductiveportion, wherein a light emitting surface of each of the light emittingdiode chips comprises an upper surface of the first conductivity typesemiconductor layer.
 3. The method of manufacturing the displayapparatus according to claim 2, wherein each of the light emitting diodechips further comprises: an encapsulation portion formed under the firstconductivity type semiconductor layer to surround the first electrodeand the second electrode; a first bump formed under the encapsulationportion and electrically connected to the first electrode and the firstconductive portion; a second bump formed under the encapsulation portionand electrically connected to the second electrode and the secondconductive portion; a first via formed through the encapsulation portionand electrically connecting the first electrode to the first bump; and asecond via formed through the encapsulation portion and electricallyconnecting the second electrode to the second bump, wherein the firstelectrode being formed under the first conductivity type semiconductorlayer exposed by partially removing the second conductivity typesemiconductor layer and the active layer, the first bump having agreater width than the first via, and the second bump having a greaterwidth than the second via.
 4. The method of manufacturing the displayapparatus according to claim 3, wherein the encapsulation portioncomprises a translucent material.
 5. The method of manufacturing thedisplay apparatus according to claim 3, wherein: the first conductiveportion and the second conductive portion partially protrude upwardsfrom an upper surface of the insulating material; a portion of the firstconductive portion protruding from the upper surface of the insulatingmaterial is coupled to the first bump of the light emitting diode chip;and a portion of the second conductive portion protruding from the uppersurface of the insulating material is coupled to the second bump of thelight emitting diode chip.
 6. The method of manufacturing the displayapparatus according to claim 2, wherein: each of the light emittingdiode chips further comprises an insulating portion formed to surround aside surface of the light emitting structure, wherein the firstelectrode is formed on the upper surface of the first conductivity typesemiconductor layer, the first electrode is formed along upper and sidesurfaces of the insulating portion to be coupled to the first conductiveportion; and the second electrode is coupled to the second conductiveportion.
 7. The method of manufacturing the display apparatus accordingto claim 6, wherein the first electrode comprises a light transmissivematerial.
 8. The method of manufacturing the display apparatus accordingto claim 6, wherein the insulating portion comprises a translucentmaterial.
 9. The method of manufacturing the display apparatus accordingto claim 6, wherein the upper surfaces of the first conductive portionand the second conductive portion are placed at different locations. 10.The method of manufacturing the display apparatus according to claim 1,wherein at least one of the first conductive portion and the secondconductive portion further comprises a filler disposed therein andcomprising an insulating material.
 11. The method of manufacturing thedisplay apparatus according to claim 1, wherein at least one of one sidesurface of the insulating material surrounding the first and secondconductive portions of the first pair and one side surface of each ofthe first and second conductive portions of the first pair is placedfurther outside than a side surface of the first light emitting diodechip coupled to the first and second conductive portions of the firstpair, and wherein at least one of one side surface of the insulatingmaterial surrounding the first and second conductive portions of thesecond pair and one side surface of each of the first and secondconductive portions of the second pair is placed further outside than aside surface of the second light emitting diode chip coupled to thefirst and second conductive portions of the second pair.
 12. The methodof manufacturing the display apparatus according to claim 1, furthercomprising: removing the second manufacturing substrate after theseparating of the first manufacturing substrate.